Tantalum nitride thin film
WebMar 1, 1979 · Tantalum nitride films were deposited by a sputtering technique and the variations in the resistivity and the temperature coefficient of resistance (TCR) with … WebJul 19, 2024 · RTAN Series Resistors The RTAN series from Stackpole is an AEC-Q200 qualified series of precision thin film chip resistors. The tantalum nitride resistive film …
Tantalum nitride thin film
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WebMar 3, 2011 · Highly stable bilayer thin film resistors, which consist of an underlying layer of tantalum nitride and of a capping layer of ruthenium oxide, were developed by taking advantage of the desired characteristics of two different materials in a single system. The resistors fabricated in such a way were highly stable under power loading or thermal … WebSep 1, 2004 · Tantalum nitride thin films were deposited at 400 deg. C by plasma enhanced atomic layer deposition using an amido-based metal organic tantalum precursor. An Ar/N{sub 2}/H{sub 2} mixture was flowed upstream of a remote plasma system to produce the reactive species used for the nitridation process. The as-deposited film was …
WebThin-film capacitors were prepared from sputtered tantalum nitride thin films (TaN capacitors). The dielectric was formed by anodic oxidation and the counterelectrode was deposited by evaporation of nichrome-gold. The TaN capacitors excelled the usual TM capacitors in various properties. The temperature coefficient of capacitance was 129 … WebJan 31, 2011 · Post-deposition rapid vacuum annealing of tantalum nitride (Ta2N) thin film resistors (TFR) was successful in improving the temperature coefficient of resistance (TCR) to ±5 ppm/°C with starting TCR at about −140 ppm/°C. A subsequent aging study revealed degradation of the nichrome (NiCr) contact interlayer. Two improved contact layers, TiW …
WebJun 9, 2011 · Tantalum nitride thin films, were deposited using a glow discharge apparatus system (Fig. 1), directly in a mixture of argon/nitrogen (Ar/N 2) gas plasma.The reactor is a Pyrex cylinder of 12 cm length and 16 cm diameter, Fig. 1.Prior to deposition 1 × 1 cm 2 pieces of steel, as substrates, were cleaned for 15 and 10 min by ethanol and acetone, … WebApr 16, 2024 · Tantalum nitride thin films are grown on silicon wafers using a mixture of Ar/N2 using DC magnetron sputtering. The influence of nitrogen concentration on various features of tantalum nitride thin films is systematically studied. X-ray diffraction results show characteristic peaks of FCC tantalum nitride with crystallite size gradually …
WebAbstract Post-deposition rapid vacuum annealing of tantalum nitride (Ta 2 N) thin film resistors (TFR) was successful in improving the temperature coefficient of resistance …
bump above eyelashWebOct 1, 2005 · The electrical resistivity and mechanical hardness of reactively sputtered tantalum nitride (TaN) thin films on ceramic substrates have been investigated. Depending on the nitrogen/argon... haley peterson actorWebJun 7, 2024 · We synthesized two series of TaN films on glass and Si substrates by using reactive radio-frequency sputtering under 5-mtorr Ar/N 2 processing pressure with varied … bump above eyebrowWebThe electrical resistivity and mechanical hardness of reactively sputtered tantalum nitride (TaN) thin films on ceramic substrates have been investigated. Depending on the nitrogen/argon gas flow rate ratio (defined as R), the resistivity of the tantalum nitride films varied unusually widely (10 7 orders) from metal to insulator. haley petroWebOct 1, 2005 · Tantalum nitride films were deposited on ceramic substrates (pre-sputtered with underlayer and 100-nm-thick aluminum oxide) by DC reactive magnetron sputtering … bump above ear piercingWebTa-N thin film is an attractive interlayer as well as a diffusion barrier layer in [Fe-N/Ta-N]n multilayers for the application as potential write head materials in high density magnetic … haley peterson pa-cWebFeb 1, 2006 · On the other hand, high DC sputtering power will increase the ionization rate of tantalum. At 1.2% N 2 /Ar ratio, the nitrogen is in deficit, the total reaction becomes more dynamically controlled. Fig. 2 is the XRD spectrum of a TaN film deposited with high DC power and low N 2 /Ar ratio. The total thickness of this film is 750 Å with a compressive … haley petrie